Senior Process Engineer: Epitaxy (III-V Foundry)
Join Sparc Foundry as Senior Process Engineer — lead III-V epitaxy development and production transfer across GaN, InP and GaAs, improving quality, yield and next-generation photonics.
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Let us tell you a little bit about the role🚀
We are looking for a Senior Process Engineer to join our III-V foundry team. This role will support the development, transfer and sustained performance of epitaxy processes across GaN, InP and GaAs material systems, working with a collaborative engineering and technical operations group in a delivery-focused environment.
⭐ What will you do with us?
Own and drive epitaxy process performance starting by the process development qualificacion, ensuring quality, yield and delivery against agreed objectives and timelines.
Develop, qualify and transfer process recipes for GaN, InP and GaAs epitaxial layers, including parameter definition, stability monitoring and controlled change management.
Perform root-cause analysis of process excursions and defects, assessing risks and implementing practical corrective and preventive actions.
Collaborate with cross-functional teams including technology, device engineering, metrology/characterisation and production operations to align process specifications with customer and internal requirements.
Define and execute experimental plans (DOE), interpret results and translate findings into actionable process improvements.
Maintain accurate records of experiments, process history, performance metrics, documentation and reports in line with internal standards.
Ensure compliance with relevant safety, quality and regulatory requirements, including lab and facility procedures and any applicable industry standards.
Support continuous improvement by identifying opportunities to streamline workflows, improve control strategies and enhance productivity and capability.
Undertake other reasonable duties relevant to the position.
🧠 What skill set are we looking for?
Proven experience (+5years) as a process engineer in epitaxy with hands-on understanding of III-V semiconductor manufacturing or development activities.
Strong working knowledge of epitaxy process fundamentals and practical experience supporting GaN, InP and/or GaAs process development and optimisation.
Demonstrated ability to run structured experiments, use data effectively and apply rigorous root-cause analysis to improve outcomes.
Excellent written and verbal communication skills, with confidence presenting technical findings to both technical and non-technical stakeholders.
Strong attention to detail, with a commitment to high-quality documentation, metrology-ready process definition and reliable execution.
Ability to work independently, prioritise tasks and manage competing deadlines in a manufacturing environment.
Comfort using standard workplace tools, lab/production systems and data analysis software used for process tracking and reporting.
Proactive, dependable and professional approach, with a focus on continuous improvement and delivery.
Ability to adapt to changing priorities and respond effectively to new challenges, customer requirements and production needs.
What is a plus?
Relevant degree or professional qualification in engineering, physics, materials science or a related discipline, or equivalent practical experience.
Experience with role-specific epitaxy tools and process control practices, including recipe documentation and controlled change procedures.
Knowledge of relevant quality, safety and process control frameworks and best practices applicable to semiconductor manufacturing.
We are looking for people who share our passion for photonics, compound semiconductors and high‑performance manufacturing. If you enjoy solving complex equipment challenges and enabling new device capabilities, you’ll fit right in.
- Locations
- Ardora III-V Headquarters
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About Ardora III-V
Ardora develops and produces compound semiconductors as part of a strong European ecosystem.
The foundry will produce components based on Group III-V semiconductors It will have the capacity to develop 20,000 wafers per year with different types of technologies based on Group III-V materials, including GaAs (Gallium Arsenide), InP (Indium Phosphide), and GaN (Gallium Nitride). These components will be used by industries around the world in sectors such as automotive, telecommunications, quantum computing, consumer electronics, defense, aerospace and medicine.